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ZVP4525Z
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS -250
-285
V
I D =-1mA, V GS =0V
Zero Gate Voltage Drain Current
Gate-Body Leakage
I DSS
I GSS
-30
±1
-500
±100
nA
nA
V DS =-250V, V GS =0V
V GS = ± 40V, V DS =0V
I =-1mA, V DS = V GS
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance (1)
Forward Transconductance (3)
V GS(th)
R DS(on)
g fs
-0.8
80
-1.5
10
13
200
-2.0
14
18
V
Ω
Ω
mS
D
V GS =-10V,
I D =-200mA
V GS =-3.5V,
I D =-100mA
V DS =-10V,I D =-0.15A
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
73
12.8
3.91
pF
pF
pF
V DS =-25 V, V GS =0V,
f=1MHz
SWITCHING (2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t d(on)
tr
t d(off)
tf
1.53
3.78
17.5
7.85
ns
ns
ns
ns
V DD =-30V, I D =-200m
A
R G =50 Ω , V GS =-10V
(refer to test circuit)
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
Qg
Q gs
Q gd
2.45
0.22
0.45
3.45
0.31
0.63
nC
nC
nC
V DS =-25V,V GS =-10V,
I D =-200mA(refer to
test circuit)
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V SD
0.97
V
T j =25°C, I S =-200mA,
V GS =0V
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
t rr
Q rr
205
21
290
29
ns
nC
T j =25°C, I F =-200mA,
di/dt=100A/ μ s
(1) Measured under pulsed conditions. Width=300 μ s. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - JUNE 2007
SEMICONDUCTORS
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